|
Quantum Computing with GaAs Impurities
Electrons bound to shallow donors in GaAs have hydrogen-like orbitals, with an effective Ryberg energy of ~6meV. The transition between the 1s and 2p orbital states can be excited with THz radiation. Current experiments are focused on evaluating these electrons as potential quantum bits, including analysis of stability and decoherence times. Rabi Oscillations between the 1s and 2p+ states have been demonstrated. Recently our group demonstrated a new technique for measuring the state of the state of shallow donors using resonant optical excitation below the band gap. Work is currently underway observed coherent transfer of the electron population from the 1s to 2p- state, using optical readout. This transition has a long (100-1000ns) lifetime, and expected to have a longer decoherence time than the 2p+ state. It is hoped that in the future this work can be combined with experiments in THz cavity QED to provide a mechanism for realizing solid state quantum computing. Back to research. |
||||||||
